ic芯(xin)片(pian)(pian)損壞(huai)的(de)(de)(de)原(yuan)因分析,芯(xin)片(pian)(pian)一般就(jiu)是電流或者電壓過大(da),導(dao)致(zhi)的(de)(de)(de)內部結構(gou)的(de)(de)(de)擊(ji)穿(chuan),有(you)些擊(ji)穿(chuan)可(ke)以造成器(qi)(qi)件(jian)的(de)(de)(de)永久(jiu)性(xing)損壞(huai)。其(qi)他也沒什么(me)原(yuan)因可(ke)以導(dao)致(zhi)IC損壞(huai)。可(ke)能(neng)還(huan)有(you)就(jiu)是發熱(re)的(de)(de)(de)問題,有(you)些器(qi)(qi)件(jian)由于(yu)受到材料的(de)(de)(de)限制(zhi),溫度不能(neng)過高,否則(ze)也就(jiu)壞(huai)了(le)。還(huan)可(ke)以通(tong)過外(wai)界(jie)電磁波,導(dao)致(zhi)芯(xin)片(pian)(pian)的(de)(de)(de)器(qi)(qi)件(jian)形成大(da)的(de)(de)(de)電流,也就(jiu)破壞(huai)了(le)電路(lu),這種(zhong)破壞(huai)面往往比(bi)較大(da)。
ic芯(xin)片(pian)損壞的(de)原因分析,常見的(de)ic芯(xin)片(pian)損壞原因有:靜電擊穿、電源超(chao)壓、過流輸(shu)出(chu)、過熱(re)燒毀等。
第一種針對(dui)CMOS而言;
第(di)二種則所(suo)有IC都會;
第三種在功率IC上,如功放、穩壓等;
第四種指的是因為(wei)環境或自身發熱引(yin)起(qi)的。
其中有綜合因(yin)素(su)造成的(de),除靜(jing)電(dian)擊穿以外,其余都會表現(xian)不同(tong)程度的(de)發熱。
ic芯片使(shi)用前損壞的原(yuan)因
編(bian)程高壓
有(you)(you)些OTP(一(yi)次可編(bian)(bian)程(cheng)(cheng)(cheng)(cheng))芯片(pian)可能(neng)需要編(bian)(bian)程(cheng)(cheng)(cheng)(cheng)高壓(ya)(ya)(ya)才(cai)能(neng)將數據寫入,雖說是高壓(ya)(ya)(ya),其實很多(duo)也(ye)就(jiu)(jiu)6、7V左(zuo)右,再高也(ye)就(jiu)(jiu)十幾伏,這種程(cheng)(cheng)(cheng)(cheng)度(du)的(de)電壓(ya)(ya)(ya)對(dui)于我們來說比較(jiao)安(an)全,但對(dui)于很多(duo)芯片(pian)來說,已(yi)經算是高壓(ya)(ya)(ya)了(le)(le),即(ji)使(shi)是需要這種電壓(ya)(ya)(ya)才(cai)能(neng)編(bian)(bian)程(cheng)(cheng)(cheng)(cheng)的(de)一(yi)些OTP芯片(pian),也(ye)無法(fa)長時(shi)間承受,因此有(you)(you)些芯片(pian)會規定高壓(ya)(ya)(ya)加載的(de)最長時(shi)間,一(yi)旦(dan)超(chao)過這個(ge)極限,OTP區就(jiu)(jiu)可能(neng)會永(yong)久損(sun)壞。有(you)(you)些編(bian)(bian)程(cheng)(cheng)(cheng)(cheng)器會提(ti)(ti)供編(bian)(bian)程(cheng)(cheng)(cheng)(cheng)高壓(ya)(ya)(ya)的(de)輸出功(gong)能(neng),在燒錄的(de)流程(cheng)(cheng)(cheng)(cheng)中自動開(kai)關編(bian)(bian)程(cheng)(cheng)(cheng)(cheng)電壓(ya)(ya)(ya),而對(dui)于那些沒(mei)有(you)(you)提(ti)(ti)供編(bian)(bian)程(cheng)(cheng)(cheng)(cheng)高壓(ya)(ya)(ya)的(de)編(bian)(bian)程(cheng)(cheng)(cheng)(cheng)器,使(shi)用時(shi)就(jiu)(jiu)要小心不要在編(bian)(bian)程(cheng)(cheng)(cheng)(cheng)的(de)時(shi)候(hou)發呆走神了(le)(le),一(yi)定要及時(shi)斷(duan)開(kai)編(bian)(bian)程(cheng)(cheng)(cheng)(cheng)高壓(ya)(ya)(ya)。
此(ci)外,還有(you)很多(duo)其他的(de)因素會(hui)損壞你的(de)芯(xin)片(pian),比如靜電防護是否做(zuo)得(de)到位,芯(xin)片(pian)存儲的(de)濕度(du),溫度(du)是否符合要(yao)(yao)求,芯(xin)片(pian)焊接(jie)的(de)溫度(du)是否過高(gao)等(deng),要(yao)(yao)提(ti)高(gao)燒寫(xie)的(de)良(liang)品(pin)率(lv),就要(yao)(yao)從多(duo)個方(fang)面做(zuo)工(gong)作,當然也不可(ke)忽略以(yi)上這些不易引起(qi)注意的(de)細節。
集成電路損壞的原因
除了(le)“摩擦生(sheng)(sheng)電(dian)”外,還有(you)“感應(ying)生(sheng)(sheng)電(dian)”和“容性生(sheng)(sheng)電(dian)”也是靜電(dian)的主要成因。
在(zai)電(dian)(dian)氣、電(dian)(dian)子設備電(dian)(dian)路中,元器件(jian)(jian)、導體(ti)和絕緣件(jian)(jian)等之間(jian)(jian),即使不發生(sheng)接觸,也會(hui)通過這兩(liang)種(zhong)方式產生(sheng)靜電(dian)(dian)。比如,電(dian)(dian)視、電(dian)(dian)腦顯示屏就(jiu)是一個靜電(dian)(dian)感(gan)應(ying)(ying)源,人體(ti)靠近它就(jiu)會(hui)感(gan)應(ying)(ying)到靜電(dian)(dian),使人感(gan)到不舒服(fu)或使皮膚干(gan)燥、吸附灰塵、出現紅斑等,這就(jiu)是“感(gan)應(ying)(ying)生(sheng)電(dian)(dian)”;又如,電(dian)(dian)路中相互靠近的(de)(de)兩(liang)個元件(jian)(jian)或導線,因為存在(zai)寄生(sheng)電(dian)(dian)容(rong),也會(hui)在(zai)彼此間(jian)(jian)轉移(yi)電(dian)(dian)荷,這即“容(rong)性生(sheng)電(dian)(dian)”的(de)(de)表現。而且(qie)這兩(liang)種(zhong)方式在(zai)許多情況下是相互兼有的(de)(de)。
當靜電(dian)(dian)(dian)積累到一定強(qiang)度時就會(hui)發生(sheng)放電(dian)(dian)(dian)(叉(cha)稱(cheng)靜電(dian)(dian)(dian)釋(shi)放或電(dian)(dian)(dian)荷(he)轉移),從而對人體、周圍物體或電(dian)(dian)(dian)子器件(jian)等造成(cheng)一定影響(xiang)或傷害,也(ye)會(hui)導致電(dian)(dian)(dian)子設備嚴重損壞或工(gong)作失常。在電(dian)(dian)(dian)子電(dian)(dian)(dian)氣領(ling)域(yu),常用ESD來表示“靜電(dian)(dian)(dian)釋(shi)放”,它是(shi)英文EleCTRo-StatICDischarge的縮寫。
由(you)于CMOS集(ji)成(cheng)(cheng)電路(lu)具有集(ji)成(cheng)(cheng)度高(gao)、速度快、能(neng)耗(hao)低等優點,因(yin)而現(xian)今(jin)的(de)(de)(de)各類電子、數碼(ma)產品中廣泛(fan)應用了這種器件(jian).如(ru)電腦里的(de)(de)(de)CPU、存儲器、“南橋(qiao)、北橋(qiao)”、各種接(jie)口(kou)電路(lu)等等,但是CMOS器件(jian)對靜(jing)電很敏感,容(rong)(rong)易被ESD損壞(huai),所以大家經(jing)常(chang)會遇(yu)到CMOS器件(jian)被靜(jing)電損壞(huai)的(de)(de)(de)現(xian)象。今(jin)天的(de)(de)(de)ic芯片損壞(huai)的(de)(de)(de)原因(yin)分析(xi)內容(rong)(rong)就到這里,希望能(neng)幫到您。